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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3458
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3458 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply.
ORDERING INFORMATION
PART NUMBER 2SK3458 2SK3458-S 2SK3458-ZK PACKAGE TO-220AB TO-262 TO-263
FEATURES
* Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) * Gate voltage rating 30 V * Low on-state resistance RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 3.0 A) * Avalanche capability ratings * Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
800 30 6.0 24 1.5 100 150 -55 to +150 6.0 66.5
V V A A W W C C A mJ
Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14755EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan
(c)
2000
2SK3458
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 450 V VGS = 10 V ID = 6.0 A IF = 6.0 A, VGS = 0 V IF = 6.0 A, VGS = 0 V di/dt = 50 A/ s TEST CONDITIONS VDS = 800 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.0 A VGS = 10 V, ID = 3.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 3.0 A VGS = 10 V RG = 10 2.5 2.0 1.8 1220 170 16 17 7 43 11 25 6 10 1.0 1490 7.5 2.2 MIN. TYP. MAX. 100 100 3.5 UNIT
A
nA V S pF pF pF ns ns ns ns nC nC nC V ns
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG RG = 10
VGS RL VDD ID
90% 90% ID
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
ID
Wave Form
0
10% td(on) ton tr td(off) toff
10% tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D14755EJ1V0DS
2SK3458
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
100 100
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
80
PT - Total Power Dissipation - W
80
60
60
40
40
20
20
0 0 20 40 60 80 100 120 140 160
0 0 20 40 60 80 100 120 140 160
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse)
PW =
ID - Drain Current - A
10
10
d ite Lim
ID(DC)
10
10 0 1 m s
s
s
1
R
n) (o DS
m s
30 ms DC Power Dissipation Limited
0.1 1
TC = 25C Single Pulse 10 100 VDS - Drain to Source Voltage - V 1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 83.3C/W
10 Rth(ch-C) = 1.25C/W 1
0.1
0.01 10
Single Pulse
100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D14755EJ1V0DS
3
2SK3458
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
10 9
1000 Pulsed VDS = 10 V 100
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
7 6 5 4 3 2 1 0 0 5 10 15 20 VGS = 10 V
ID - Drain Current - A
8
10
1
TA = -50C -25C 25C 75C 125C 150C
0.1
0.01
0.001 0 5 10 15
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
10 TA = -50C -25C 25C 75C 125C 150C
4.0
VGS(off) - Gate Cut-off Voltage - V
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150
Tch - Channel Temperature - C
1
0.1 0.1 1 10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance -
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1 10 100 VGS = 10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance -
3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 5 10 15 20 25
VGS - Gate to Source Voltage - V ID = 6.0 A 3.0 A 1.2 A
ID - Drain Current - A
4
Data Sheet D14755EJ1V0DS
2SK3458
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance -
5.0 4.5
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss, Coss, Crss - Capacitance - pF
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 ID = 6.0 A 3.0 A
Ciss 1000
100
Coss
10 VGS = 0 V f = 1 MHz 1 0.1 1 10 100 1000 C rss
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns
700 600 500 400 300 200 100 0 0.1 1 10 100 0 5 10 15 20 25
ID - Drain Current - A QG - Gate Charge - nC
14 VDD = 450 V 300 V 150 V 12 10 8 VGS 6 4 VDS 2 0
VGS - Gate to Source Voltage - V
ID = 6.0 A
100
td(off)
td(on) 10 tf
tr 1
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
10000
100
trr - Reverse Recovery Time - ns ISD - Diode Forward Current - A
10
1000
1
VGS = 10 V
100
0.1
0V
di/dt = 50 A/ s VGS = 0 V
0.01 0 0.5 1 1.5
VSD - Source to Drain Voltage - V
Data Sheet D14755EJ1V0DS
10 0.1 1 10 100
IF - Drain Current - A
5
2SK3458
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
100
SINGLE AVALANCHE ENERGY DERATING FACTOR
IAS - Single Avalanche Current - A
100
Energy Derating Factor - %
80 60 40 20 0
10
IAS = 6.0 A EAS = 66.5 mJ
VDD = 150 V RG = 25 VGS = 20 0 V Starting Tch = 25C IAS 6.0 A
1 VDD = 150 V RG = 25 VGS = 20 0 V Starting Tch = 25C 0.1 100
1m
10 m
100 m
25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D14755EJ1V0DS
2SK3458
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
3.00.3
10.6 MAX. 10.0 TYP. 4.8 MAX.
2) TO-262 (MP-25 Fin Cut)
1.00.5
3.60.2
5.9 MIN.
4.8 MAX. 1.30.2
1.30.2
10 TYP.
15.5 MAX.
4 1 2 3
4 123
6.0 MAX.
1.30.2
1.30.2
12.7 MIN.
12.7 MIN.
8.50.2
0.750.1 2.54 TYP.
0.50.2 2.54 TYP.
1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.3 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
3) TO-263 (MP-25ZK)
10.00.2 No plating 0.4 8.4 TYP. 4
1.350.3
4.450.2 1.30.2
8.0 TYP.
9.150.2
EQUIVALENT CIRCUIT
15.250.5
0.025 to 0.25
Drain (D)
2.450.25
0.5
0.70.15 2.54 1 2 3
0.2 8o
Gate (G)
Body Diode
0 to
0.25 1.Gate 2.Drain 3.Source
Source (S)
2.5
4.Fin (Drain)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
Data Sheet D14755EJ1V0DS
7
2SK3458
* The information in this document is current as of June, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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